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ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current V GS =-10V; T A =25°C(b)
V GS =-10V; T A =70°C(b)
V GS =-10V; T A =25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
I DM
IS
I SM
PD
PD
T j :T stg
LIMIT
-30
± 20
-7.9
-6.3
-6.25
-28
-4.1
-28
1.56
12.5
2.5
20
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
80
50
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
2
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